Growth of zinc-blende GaN on muscovite mica by molecular beam epitaxy

Growth of GaN on porous SiC by molecular beam epitaxy

Growth of GaN on SiC(0001) by Molecular Beam Epitaxy

GaN films are grown by plasma-assisted molecular beam epitaxy on 6H-SiC(0001) substrates. Suitable substrate preparation and growth conditions are found which greatly improve the structural quality of the films. Threading dislocation densities of about 1 10 cm for edge dislocations and 1 10 cm for screw dislocations are achieved in GaN films of 1 m thickness grown under optimal conditions. Reve...

Molecular Beam Epitaxial Growth of Zinc-Blende FeN(111) on Wurtzite GaN(0001)

We report a study of the growth of iron nitride on gallium nitride using molecular beam epitaxy with Fe e-beam evaporation and rf N-plasma growth. Thin iron nitride layers of thickness about 16 nm were grown and monitored in-situ using reflection high energy electron diffraction. The samples following growth were analyzed ex-situ using a variety of techniques including x-ray diffraction, Ruther...

Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy

We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE). Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN grating region is removed from the backside to form freestanding GaN gratings, and the patterned growth is subse...

Gallium desorption kinetics on (0001) GaN surface during the growth of GaN by molecular-beam epitaxy

Gallium Ga surface desorption behavior was investigated using reflection high-energy electron diffraction during the GaN growth. It was found that the desorption of Ga atoms from the 0001 GaN surfaces under different III-V ratio dependents on the coverage of adsorbed atoms. Doing so led to desorption energies of 2.76 eV for Ga droplets, 1.24–1.89 eV for Ga under Ga-rich growth conditions, and 0...